Combining high resolution and tensorial analysis in Raman stress measurements of silicon.
- Resource Type
- Article
- Authors
- Bonera, Emiliano; Fanciulli, Marco; Batchelder, David N.
- Source
- Journal of Applied Physics. 8/15/2003, Vol. 94 Issue 4, p2729-2740. 12p. 1 Black and White Photograph, 5 Diagrams, 2 Charts, 8 Graphs.
- Subject
- *RAMAN spectroscopy
*SILICON
*MICROELECTRONICS
*SEMICONDUCTORS
- Language
- ISSN
- 0021-8979
We present the development of a Raman spectroscopy technique for the measurement of the tensorial nature of stress in silicon on a micrometric scale. After the detailed description of the theoretical bases of the experiment, we measure the stress tensor of a silicon surface close to a scratch. Then, we apply this method to discern which models are suitable for the description of the stress tensor in shallow trench isolations for microelectronics. [ABSTRACT FROM AUTHOR]