A novel phase change memory with recessed cell structure has been successfully fabricated based on 40 nm Complementary-Metal-Oxide-Semiconductor technology. Etching back (EB) process and deposition-etching-deposition (DED) process are used for the formation of recessed hole and the gap filling of the recessed hole with Ge 2 Sb 2 Te 5 , respectively. With the combination of EB and DED processes, the recessed cell structure can be easily manufactured based on the current planar structure. The RESET current is reduced by 33.3% to 0.8 mA and the distribution tail of RESET resistance is solved. Moreover, about 10 7 cycles endurance with more than 300x resistance ratio have been obtained. [ABSTRACT FROM AUTHOR]