The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process.
- Resource Type
- Article
- Authors
- Zhao, Mingjie; Yan, Jiahao; Wang, Yaotian; Chen, Qizhen; Cao, Rongjun; Xu, Hua; Wuu, Dong-Sing; Wu, Wan-Yu; Lai, Feng-Min; Lien, Shui-Yang; Zhu, Wenzhang
- Source
- Nanomaterials (2079-4991). Apr2024, Vol. 14 Issue 8, p690. 12p.
- Subject
- *X-ray photoelectron spectra
*TRANSISTORS
*THIN film transistors
*THRESHOLD voltage
*INHOMOGENEOUS materials
*MAGNETRON sputtering
*LOW temperatures
- Language
- ISSN
- 2079-4991
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of the device. In this study, α-IGZO TFTs were prepared by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The channel was prepared under a two-step deposition pressure process to modulate its electrical properties. X-ray photoelectron spectra revealed that the front-channel has a lower Ga content and a higher oxygen vacancy concentration than the back-channel. This process has the advantage of balancing high mobility and a low threshold voltage of the TFT when compared with a conventional homogeneous channel. It also has a simpler fabrication process than that of a dual active layer comprising heterogeneous materials. The HiPIMS process has the advantage of being a low temperature process for oxide TFTs. [ABSTRACT FROM AUTHOR]