Nondestructive mapping of carrier concentration and dislocation density ni n[sub +]-type GaAs.
- Resource Type
- Article
- Authors
- Look, D.C.; Walters, D.C.
- Source
- Applied Physics Letters. 10/24/1994, Vol. 65 Issue 17, p2188. 3p. 4 Diagrams, 2 Graphs.
- Subject
- *MATHEMATICAL mappings
*DISLOCATIONS in crystals
*GALLIUM alloys
- Language
- ISSN
- 0003-6951
Demonstrates the nondestructive mapping of carrier concentration and dislocation density in n[sup +]-type GaAs. Correlation of transition mappings with carrier concentration; Variation in absorption via free-carrier interconduction-band transitions; Usefulness of the phenomena for n[sup +]-GaAs wafer characterization.