Aging Model for a 40 V Nch MOS, Based on an Innovative Approach.
- Resource Type
- Article
- Authors
- Alagi, Filippo; Stella, Roberto; Viganó, Emanuele
- Source
- IETE Journal of Research. May/Jun2012, Vol. 58 Issue 3, p191-196. 6p.
- Subject
- *AGING
*MOS integrated circuits
*COMPUTER simulation
*COMPUTER software
*TRANSISTORS
*MATHEMATICAL models
- Language
- ISSN
- 0377-2063
Usually, aging models implemented in design kits are able to accurately describe parameter degradation only if kinetics during constant voltage stress is relatively simple; a methodology is proposed to extend aging simulation to a more complex behavior, and indeed implementable into a commercial software environment (in the case Eldo UDRM by Mentor Graphics). The methodology is applied to describe Ron drift of a 40 V Nch MOS transistor. [ABSTRACT FROM AUTHOR]