High conductivity in Ge-doped AlN achieved by a non-equilibrium process.
- Resource Type
- Article
- Authors
- Bagheri, Pegah; Quiñones-Garcia, Cristyan; Khachariya, Dolar; Loveless, James; Guan, Yan; Rathkanthiwar, Shashwat; Reddy, Pramod; Kirste, Ronny; Mita, Seiji; Tweedie, James; Collazo, Ramón; Sitar, Zlatko
- Source
- Applied Physics Letters. 4/3/2023, Vol. 122 Issue 14, p1-6. 6p.
- Subject
- *IONIZATION energy
*ION implantation
*PHOTOLUMINESCENCE
*SPECTROMETRY
- Language
- ISSN
- 0003-6951
Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previously demonstrated shallow donor state in Si-implanted AlN, Ge implantation also showed a shallow donor behavior in AlN with an ionization energy ∼80 meV. Ge showed a 3× higher conductivity than its Si counterpart for a similar doping level. Photoluminescence spectroscopy indicated that higher conductivity for Ge-doped AlN was achieved primarily due to lower compensation. This is the highest n-type conductivity reported for AlN doped with Ge to date and demonstration of technologically useful conductivity in Ge-doped AlN. [ABSTRACT FROM AUTHOR]