The oxidation resistance of amorphous Si B C N monolith was investigated at 1500–1800 °C. The oxide products are amorphous SiO 2 and cristobalite underlying amorphous oxide scale. The release of gases including CO, CO 2 , N 2 and evaporation of B 2 O 3 result in formation of bubbles and loose, porous oxide scale at 1600 °C. Si B C N monolith exhibits oxidation resistance superior to SiC and Si 3 N 4 above 1600 °C, and retains significant resistance to oxidation up to 1800 °C. The formation of dense, passivating surface layers of N-containing amorphous SiO 2 , the ternary chemical bonds and capsule-like structures are primarily responsible for the oxidation resistance. [ABSTRACT FROM AUTHOR]