A highly biased linear current method (HBLCM) for separately extracting source and drain resistance ( RS and RD) in MOSFETs is proposed. The technique can be applied to a single device by using simple modeling. Compared to other methods, it provides accurate values of RS and RD because it considers carrier mobility degradation. The method basically uses linear current versus gate voltage ( IDS-VGS and ISD-VGD) characteristics before and after the source/drain interchange ( IDS and ISD). Afterward, by using the traditional Y-function and subsequent resistance modeling in a highly biased linear condition, RS and RD can be separately extracted. In order to evaluate and verify the accuracy of HBLCM, an external resistor was intentionally connected to a source electrode of a device, and the resulting change in source resistance was detected using the proposed method. Moreover, to demonstrate an application of the proposed method, internal resistance deliberately created by hot-carrier injection (HCI) was linked to a drain electrode, thereby changing drain resistance. The changed drain resistancewas also sensed by the HBLCM. Afterward, the HCI-stressed device was cured by electrothermal annealing driven by Joule heating, and the recovery was again clearly observed using the proposed method. [ABSTRACT FROM AUTHOR]