Single crystals of quasi-two-dimensional charge-density-wave (CDW) material η -Mo 4 O 11 were successfully grown by chemical vapor transport (CVT) method with TeCl 4 and I 2 as carrier gas, respectively. The obtained crystals with TeCl 4 as carrier gas have a largest size of 16 × 6 × 0.8 mm3 with high quality determined by x-ray single-crystal diffraction, chemical analysis and electrical transport measurements. Temperature dependent resistivity shows that η -Mo 4 O 11 is of highly anisotropy and undergoes successive CDW transitions at 105 K and 30 K, consistent with early reports. It is found that η -Mo 4 O 11 with TeCl 4 as carrier gas has a relative higher Residual Resistance Ratio (RRR), carrier density and mobility than that with I 2 as carrier gas. This results in a much smaller magnetoresistance but pronounced Shubnikov-de Haas oscillations, providing opportunities to study the unusual oscillations of this compound beyond the quantum limit. For the Hall resistance, a drop above 10 T is reproduced corresponding to a steep increase of magnetoresistance. • Large size single crystals of charge-density-wave material h -Mo 4 O 11 were successfully grown by CVT with different carrier gas. • h -Mo 4 O 11 with TeCl 4 as carrier gas has a relative higher RRR, carrier density and mobility than that with I 2. • Pronounced Shubnikov-de Haas oscillations and abnormal Hall effect have been observed. [ABSTRACT FROM AUTHOR]