NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC.
- Resource Type
- Article
- Authors
- Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya; Kometani, Reo; Kanda, Kazuhiro; Matsui, Shinji
- Source
- AIP Conference Proceedings. 2007, Vol. 879 Issue 1, p1423-1426. 4p. 3 Graphs.
- Subject
- *CARBON
*X-ray absorption near edge structure
*CHEMICAL vapor deposition
*FOCUSED ion beams
*ABSORPTION spectra
- Language
- ISSN
- 0094-243X
Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275–320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0° to 60°. The peak intensity corresponding to the resonance transition of 1s→σ* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200°C to the FIB-CVD DLC annealed at 400°C and decreased from that at 400°C to that at 600°C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400°C at the incident angle of 60°. On the contrary, the peak intensity corresponding to the resonance transition of 1s→π* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200°C to that at 400°C and increased from that at 400°C to that at 600°C. Gallium concentration in the FIB-CVD DLC decreased from ≈2.2% of the as-deposited FIB-CVD DLC to ≈1.5% of the FIB-CVD DLC annealed at 600°C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600°C. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR]