Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study.
- Resource Type
- Article
- Authors
- Russell, Stephen A. O.; Cao, Liang; Qi, Dongchen; Tallaire, Alexandre; Crawford, Kevin G.; Wee, Andrew T. S.; Moran, David A. J.
- Source
- Applied Physics Letters. 11/11/2013, Vol. 103 Issue 20, p202112. 4p. 1 Chart, 3 Graphs.
- Subject
- *SEMICONDUCTOR doping
*PHOTOELECTRON spectroscopy
*CHARGE exchange
*ELECTRONIC equipment
*ELECTRON affinity
*TRANSITION metal oxides
- Language
- ISSN
- 0003-6951
Surface transfer doping of diamond has been demonstrated using MoO3 as a surface electron acceptor material. Synchrotron-based high resolution photoemission spectroscopy reveals that electrons are transferred from the diamond surface to MoO3, leading to the formation of a sub-surface quasi 2-dimensional hole gas within the diamond. Ex-situ electrical characterization demonstrated an increase in hole carrier concentration from 1.00 × 1013/cm2 for the air-exposed hydrogen-terminated diamond surface to 2.16 × 1013/cm2 following MoO3 deposition. This demonstrates the potential to improve the stability and performance of hydrogen-terminated diamond electronic devices through the incorporation of high electron affinity transition metal oxides. [ABSTRACT FROM AUTHOR]