In advanced logic devices, access resistance to transistors is dominated by metal–semiconductor contact resistivity. Recent studies report values below 1 × 10−9 ohm cm2, realizing metastable incorporation of dopants into epitaxially grown semiconductor materials. In this study, we have investigated segregation and activation of antimony (Sb) implanted in silicon (Si) epilayers by using UV nanosecond pulsed laser annealing (LA). The Sb-implanted Si epilayers were partially or fully molten by LA, followed by the analysis of atomic and electrically active dopant concentrations as well as the observation of surface morphology evolution. To discuss the impact of the solute trapping phenomenon on substitutional incorporation of the Sb atoms, we also simulated the evolution of solidification front velocity in the LA-induced non-equilibrium solidification. It is noteworthy that the active level of the Sb atoms largely surpasses their reported equilibrium solubility limit (∼2.6 × 1020 at./cm3 compared to ∼6.8 × 1019 at./cm3) when the non-equilibrium solidification approaches a near-complete solute trapping regime. [ABSTRACT FROM AUTHOR]