We model resonant terahertz photoconductance recently observed in field-effect transistors with a double-quantum-well (DQW) channel. Comparison of the measured THz resonant photoresponse to the calculated THz absorption spectrum establishes that the resonances are determined by standing plasma waves in the DQW channel under metallic portions of the grating gate. It is found theoretically that the DQW asymmetry mixes the acoustic and optical plasmons resulting in a rather intense ac electric field between the QWs. [ABSTRACT FROM AUTHOR]