Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor.
- Resource Type
- Article
- Authors
- Miller, E. J.; Dang, X. Z.
- Source
- Journal of Applied Physics. 6/1/2000, Vol. 87 Issue 11, p807O. 4p. 1 Diagram, 2 Graphs.
- Subject
- *ELECTRIC capacity
*FIELD-effect transistors
- Language
- ISSN
- 0021-8979
Presents a study which performed gate-drain capacitance and conductance measurements on a heterostructure field-effect transistor to determine the effects of trap states on frequency-dependent device characteristics. Experimental details; Results and discussion.