Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers.
- Resource Type
- Article
- Authors
- Gajula, D. R.; Baine, P.; Modreanu, M.; Hurley, P. K.; Armstrong, B. M.; McNeill, D. W.
- Source
- Applied Physics Letters. 1/6/2014, Vol. 104 Issue 1, p012102-1-012102-4. 4p. 1 Diagram, 5 Graphs.
- Subject
- *FERMI level
*ELECTRONIC structure
*ATOMIC layer deposition
*CONTACT resistance (Materials science)
*THICKNESS measurement
- Language
- ISSN
- 0003-6951
Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (~2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm. [ABSTRACT FROM AUTHOR]