A Novel 1.2–V 4.5-ppm/°C Curvature-Compensated CMOS Bandgap Reference.
- Resource Type
- Article
- Authors
- Ma, Bill; Yu, Fengqi
- Source
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Apr2014, Vol. 61 Issue 4, p1026-1035. 10p.
- Subject
- *BAND gaps
*CMOS integrated circuits
*CAPACITANCE measurement
*MOS integrated circuits
*TRANSISTORS
*VOLTAGE references
- Language
- ISSN
- 1549-8328
This paper proposes a novel CMOS bandgap reference (BGR) with high-order curvature-compensation by using MOS transistors operating in weak inversion region. The mechanism of the proposed curvature-compensation technique is analyzed thoroughly and the corresponding BGR circuit was implemented in standard CMOS 0.18 µm technology. The experimental results show that the proposed BGR achieves 4.5 ppm/°C over the temperature range of –40°C to 120°C at 1.2 V supply voltage. It consumes only 36 µA. In addition, it achieves line regulation performance of 0.054%/V. It is suitable for low-power applications requiring references with high precision. [ABSTRACT FROM AUTHOR]