Simulation and analysis of silicon electro-optic modulators utilizing the carrier-dispersion effect and impact-ionization mechanism.
- Resource Type
- Article
- Authors
- Huang, H. C.; Lo, T. C.
- Source
- Journal of Applied Physics. 8/1/1993, Vol. 74 Issue 3, p1521. 8p. 14 Graphs.
- Subject
- *ELECTROOPTICAL devices
*ELECTRONIC modulators
*IONIZATION (Atomic physics)
- Language
- ISSN
- 0021-8979
Presents a study that proposed a type of silicon guided-wave electro-optic modulator. Use of the impact-ionization mechanism for carrier generation by the modulator; Electrical and wave propagation properties of the modulator; Attainment of numerical estimates of phase modulation due to refractive-index change.