Resistance switching properties of sol-gel derived La0.67Ca0.33MnO3 thin films on F-doped SnO2 conducting glass.
- Resource Type
- Article
- Authors
- Ting Zhang; Zhaohui Su; Hongju Chen; Linghong Ding; Weifeng Zhang
- Source
- Applied Physics Letters. 10/27/2008, Vol. 93 Issue 17, p172104. 3p. 4 Graphs.
- Subject
- *HETEROSTRUCTURES
*ELECTRIC currents
*ELECTRIC potential
*INTERFACES (Physical sciences)
*SWITCHING circuits
*FERROELECTRIC RAM
*THIN films
- Language
- ISSN
- 0003-6951
The electric-pulse-induced resistance switching of the Au–La0.67Ca0.33MnO3(LCMO)-FTO (fluorine-doped tin oxide) heterostructures was studied by electrochemical workstation. A distinct current-voltage characteristic of the device with pronounced reproducible nonlinearity, asymmetry, and hysteresis was observed at room temperature. The current-voltage characteristics suggest a Poole–Frenkel and space-charge-limited current type mechanism controlled by Au/LCMO interface traps. The resistance switching behavior shows obvious multilevel resistance switching. The present results suggest a possible application of Ag-LCMO-FTO system as multilevel memory devices. [ABSTRACT FROM AUTHOR]