Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions.
- Resource Type
- Article
- Authors
- Hanson, D.E.; Voter, A.F.; Kress, J. D.
- Source
- Journal of Applied Physics. 10/1/1997, Vol. 82 Issue 7, p3552. 8p. 2 Diagrams, 1 Chart, 12 Graphs.
- Subject
- *MOLECULAR dynamics
*SILICON
*SIMULATION methods & models
*ETCHING
- Language
- ISSN
- 0021-8979
Reports on the results from the molecular dynamics simulation of the etching of a Si surface by energetic Cl atoms. Energy dependence of the Si yield; Variation of Si yield with the impact angle of incidence; Stoichiometry of desorbed materials; Effect of a thermal background Cl flux to the surface.