Structural and Photoluminescence Properties of Heteroepitaxial Silicon-on-Sapphire Layers.
- Resource Type
- Article
- Authors
- Svetlov, S.P.; Chalkov, V. Yu.; Shengurov, V.G.; Drzodov, Yu. N.; Krasil'nik, Z.F.; Krasil'nikova, L.V.; Stepikhova, M.V.; Pavlov, D.A.; Pavlova, T.V.; Shilyaev, P.A.; Khokhlov, A.F.
- Source
- Physics of the Solid State. Jan2004, Vol. 46 Issue 1, p10-12. 3p.
- Subject
- *SILICON
*SAPPHIRES
*HETEROSTRUCTURES
*SEMICONDUCTORS
*MOLECULAR beam epitaxy
*SILICON-on-insulator technology
*PHOTOLUMINESCENCE
- Language
- ISSN
- 1063-7834
The growth of erbium-doped silicon layers on sapphire substrates through sublimation molecular-beam epitaxy is studied for the first time. Structural analysis data are given, and the luminescence properties of layers are discussed. Heteroepitaxial silicon-on-sapphire layers grown at a temperature T[sub s] = 600–700°C are found to be fairly perfect in structure. Photoluminescence spectra show a peak at a wavelength of 1.54 μm associated with intracenter transitions in the rare earth Er[sup 3+] ion. © 2004 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]