Extraction of carriers photogenerated at p type amorphous SiC window layer in amorphous Si solar cells.
- Resource Type
- Article
- Authors
- Baik, Seung Jae; Kang, Sang Jung; Lim, Koeng Su
- Source
- Applied Physics Letters. 9/20/2010, Vol. 97 Issue 12, p122102. 3p.
- Subject
- *PHOTOCHEMISTRY
*AMORPHOUS semiconductors
*SILICON carbide
*SILICON solar cells
*ELECTRIC fields
*ENERGY bands
*SURFACES (Technology)
*QUANTUM chemistry
- Language
- ISSN
- 0003-6951
The polarity of built-in electric field in p type amorphous SiC window layer originated from the band alignment with the front electrode, strongly affects carrier collection of amorphous Si solar cells. Additionally, it can be switched by reversing the surface band bending of transparent electrodes. Nitrogen incorporation at the surface of Al-doped ZnO modifies the surface band bending from the condition of carrier accumulation to that of carrier depletion; thereby quantum efficiency in short wavelength region is enhanced. The reversal of band bending also causes degradation of fill factors and open circuit voltages, which can be minimized to attain efficiency improvement. [ABSTRACT FROM AUTHOR]