An alternative for shallow doping: gas cluster infusion. (cover story)
- Resource Type
- Article
- Authors
- Hautala, John; Gwinn, Matt; Skinner, Wes; Yan Shao
- Source
- Solid State Technology. Dec2006, Vol. 49 Issue 12, p61-66. 4p.
- Subject
- *SEMICONDUCTOR doping
*ION bombardment
*COMPLEX ions
*PHOTORESISTS
*GIRDERS
- Language
- ISSN
- 0038-111X
The article discusses the doping mechanism of infusion and other implant technologies for ultra-shallow junctions and DRAM manufacturing in gas cluster ion beams technology. These technologies have the capabilities of mass-independent doping for simultaneous co-doping of multiple species. It also features a low power ion beam which allows a room temperature process with photoresist compatibility.