Heteroepitaxy of semiconductor-on-insulator structures: Si and Ge on CaF2/Si(111).
- Resource Type
- Article
- Authors
- Fathauer, R. W.; Lewis, N.; Hall, E. L.; Schowalter, L. J.
- Source
- Journal of Applied Physics. 12/1/1986, Vol. 60 Issue 11, p3886. 9p.
- Subject
- *SILICON-on-insulator technology
*SILICON
*GERMANIUM
*CALCIUM compounds
- Language
- ISSN
- 0021-8979
Studies the heteroepitaxy of semiconductor-on-insulator structures of silicon and germanium grown on calcium compounds. Applications of heteroepitaxial semiconductor/group-II fluoride/silicon structures; Details on the experimental procedure; Discussion on the results of the study.