Improvement of the Conductivity and Surface Passivation Properties of Boron-doped Poly-silicon on Oxide.
- Resource Type
- Article
- Authors
- Morisset, Audrey; Cabal, Raphaël; Grange, Bernadette; Marchat, Clément; Alvarez, José; Gueunier-Farret, Marie-Estelle; Dubois, Sébastien; Kleider, Jean-Paul
- Source
- AIP Conference Proceedings. 2018, Vol. 1999 Issue 1, p1-6. 6p.
- Subject
- *SILICON oxide
*RECOMBINATION (Chemistry)
*HYDROGENATION
*OPEN-circuit voltage
*THIN films
- Language
- ISSN
- 0094-243X
Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin silicon oxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and to increase the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealing conditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve the poly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister density and have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV. [ABSTRACT FROM AUTHOR]