Electrical hysteresis of ultrathin silicon oxides induced by heavy boron doping.
- Resource Type
- Article
- Authors
- Eom, Daejin; Moon, Chang-Youn; Koo, Ja-Yong
- Source
- Journal of Applied Physics. 2018, Vol. 124 Issue 16, pN.PAG-N.PAG. 7p. 1 Color Photograph, 2 Diagrams, 1 Chart, 6 Graphs.
- Subject
- *SILICON oxide
*HYSTERESIS
*BORON
*DOPING agents (Chemistry)
*NANOFABRICATION
- Language
- ISSN
- 0021-8979
We have fabricated a resistive memory device made of the ultrathin (1.6–3.6 nm) layer of silicon oxide, for which the electrical hysteresis is hardly induced via the conventional electroforming process or field-driven structural modification because non-dissipative quantum tunneling across it hampers this process. We show that such thin silicon oxide comes to exhibit the hysteretic behavior successfully when a large amount of boron atoms are incorporated into it: a typical ratio of high-to-low resistance is as high as > 300 and maintained up to the set/reset cycles of > 50 000 , and the projected retention time is longer than a couple of months. We also propose an electronic model for its hysteretic mechanism where the charge trapping into the boron-induced defects in silicon oxide and the alteration of its energy band near the interfacial region play the active roles. [ABSTRACT FROM AUTHOR]