Domain structure transition in compressively strained (100)/(001) epitaxial tetragonal PZT film.
- Resource Type
- Article
- Authors
- Ichinose, Daichi; Shimizu, Takao; Sakata, Osami; Yamada, Tomoaki; Ehara, Yoshitaka; Funakubo, Hiroshi
- Source
- Journal of Applied Physics. 1/14/2021, Vol. 129 Issue 2, p1-6. 6p.
- Subject
- *FERROELECTRIC thin films
*EPITAXY
*PIEZORESPONSE force microscopy
*CHEMICAL vapor deposition
*LATTICE constants
*UNIT cell
*GRAZING incidence
- Language
- ISSN
- 0021-8979
A 30-nm-thick epitaxial tetragonal (100)/(001) Pb(Zr0.22Ti0.78)O3 (PZT) thin film was grown at 600 °C on (001) KTaO3 (KTO) single-crystal substrate by metalorganic chemical vapor deposition. The a/c domain structure in the PZT film was analyzed in detail at room temperature by synchrotron x-ray diffraction (XRD) and piezoresponse force microscopy techniques. The temperature dependence of the crystal structure was investigated by XRD reciprocal space mapping and in-plane grazing incidence XRD. The PZT films were grown on KTO substrates under compressive strains from 700 °C to room temperature. This compressive strain gave rise to a perfect (001) orientation below a Curie temperature (TC) of ∼520 °C. An in-plane a-axis lattice parameter for the c domain kept the same value as that of the substrate lattice up to 350 °C despite the ferroelectric transition. Nucleation of the a domain started at around 350 °C. The formation of the a domain released the strain for the in-plane a-axis lattice parameter, as confirmed by in-plane analysis of the crystal structure. The results revealed that the in-plane average surface area of the PZT unit cell continued to match that of the KTaO3 substrate from 700 °C to room temperature, regardless of the domain structure evolution. [ABSTRACT FROM AUTHOR]