SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum
- Resource Type
- Article
- Authors
- Delcroix, P.; Blonkowski, S.; Kogelschatz, M.; Rafik, M.; Gourhant, O.; JeanJean, D.; Beneyton, R.; Roy, D.; Federspiel, X.; Martin, F.; Garros, X.; Grampeix, H.; Gassilloud, R.
- Source
- Microelectronic Engineering. Jul2011, Vol. 88 Issue 7, p1376-1379. 4p.
- Subject
- *SILICA
*ELECTRIC breakdown
*OXIDES
*NANOELECTRONICS
*VACUUM
*ATOMIC force microscopy
*MEASUREMENT
*ELECTRODES
- Language
- ISSN
- 0167-9317
Abstract: Time dependent dielectric breakdown (TDDB) measurements on a nano-scale using an AFM tip under ultra high vacuum as upper electrode are systematically compared to device measurements in this paper. Both studies were performed on the same SiON or SiO2/HfSiON gate oxides. The shape factor of the TDDB distribution and the acceleration factor are compared at both scales. [Copyright &y& Elsevier]