Effects of dry etching damage removal on low-temperature silicon selective epitaxial growth.
- Resource Type
- Article
- Authors
- Tseng, H.-C.; Chang, C. Y.; Pan, F. M.; Chen, L. P.
- Source
- Journal of Applied Physics. 10/1/1995, Vol. 78 Issue 7, p4710. 5p.
- Subject
- *EPITAXY
*SILICON
*ELECTRON spectroscopy
- Language
- ISSN
- 0021-8979
Presents a study which investigated the epitaxial silicon layer grown on the reactive ion etched (RIE) silicon substrate using CF[sub4], CHF[sub3] and argon etching gases. Characteristics of the epilayer and the interface between the epilayer and the substrate; Discussion on the surface composition of the RIE-treated silicon substrate with Auger electron spectroscopy; Steps required in the selective epitaxial growth of silicon.