Arsenic passivation of InP surface for metal-insulator-semiconductor devices based on both ultra-high vacuum technique and chemical procedure.
- Resource Type
- Article
- Authors
- Chave, J.; Choujaa, A.; Santinelli, C.; Blanchet, R.; Viktorovitch, P.
- Source
- Journal of Applied Physics. 1/1/1987, Vol. 61 Issue 1, p257. 4p. 1 Diagram, 5 Graphs.
- Subject
- *INTEGRATED circuit passivation
*INDIUM
*PHOSPHORUS
*MATHEMATICAL optimization
- Language
- ISSN
- 0021-8979
Deals with a study which presented two passivation treatments of InP surface. Optimization of the passivation technique; Thermal treatment under an arsenic partial pressure by molecular-beam epitaxy technique; Discussion and conclusions.