Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator deposition.
- Resource Type
- Article
- Authors
- Sautreuil, B.; Viktorovitch, P.; Blanchet, R.
- Source
- Journal of Applied Physics. 3/15/1985, Vol. 57 Issue 6, p2322. 3p.
- Subject
- *ELECTRIC insulators & insulation
*SEDIMENTATION & deposition
*PHOTOLUMINESCENCE
- Language
- ISSN
- 0021-8979
Presents a study which identified evidence for interfacial defects in metal-insulator-indium phosphide structures induced by insulator deposition. Overview of previous studies on photoluminiscence (PL) emitted by n-type indium phosphide surface; Description of a normalized PL intensity for different insulator thickness and deposition conditions; Presentation of PL intensities in arbitrary units of several metal-insulator-semiconductor structures after annealing.