Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.
- Resource Type
- Article
- Authors
- Avakyants, L.; Aslanyan, A.; Bokov, P.; Polozhentsev, K.; Chervyakov, A.
- Source
- Semiconductors. Feb2017, Vol. 51 Issue 2, p189-192. 4p.
- Subject
- *ELECTRIC properties of gallium nitride
*ELECTRIC properties of indium gallium nitride
*SPECTRUM analysis
*INDIUM gallium nitride
*HETEROSTRUCTURES
*P-N junctions (Semiconductors)
*QUANTUM wells
- Language
- ISSN
- 1063-7826
A line at E = 2.77 eV (with a width of Γ = 88 meV) related to interband transitions in the region of multiple quantum wells in the active region is detected in the electroreflectance spectra of the GaN/InGaN/AlGaN heterostructure. As the modulation bias is reduced from 2.9 to 0.4 V, the above line is split into two lines with energies of E = 2.55 eV and E = 2.75 eV and widths of Γ = 66 meV and Γ = 74 meV, respectively. The smaller widths of separate lines indicate that these lines are caused by interband transitions in particular quantum wells within the active region. The difference between the interband transition energies E and E in identical quantum wells in the active region is related to the fact that the quantum wells are in an inhomogeneous electric field of the p-n junction. The magnitudes of the electric-field strengths in particular quantum wells in the active region of the heterostructure are estimated to be 1.6 and 2.2 MV/cm. [ABSTRACT FROM AUTHOR]