Band-gap narrowing in ordered Ga[sub 0.47]In[sub 0.53]As.
- Resource Type
- Article
- Authors
- Arent, D.J.; Bode, M.; Bertness, K.A.; Kurtz, Sarah R.; Olson, J.M.
- Source
- Applied Physics Letters. 4/12/1993, Vol. 62 Issue 15, p1806. 3p. 2 Diagrams, 3 Graphs.
- Subject
- *ENERGY-band theory of solids
*METAL organic chemical vapor deposition
- Language
- ISSN
- 0003-6951
Examines the band-gap reduction in ordered Ga[sub 0.47]In[sub 0.53]As layer. Deposition of the layer by atmospheric pressure organometallic vapor phase epitaxy; Reduction of band-gap energy; Influence of growth parameters on band-gap energy.