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000 camIi
001 2210080852073
003 OCoLC
005 20190103135228
006 m d
007 cr cnu---unuuu
008 171104s2017 enk ob 001 0 eng d
020 a9781785613661q(electronic bk.)
020 a1785613669q(electronic bk.)
035 a1616417b(NT)
035 a(OCoLC)1009268182
040 aEBLCPbengerdaepncEBLCPdIDEBKdNdOCLCFdYDXdOCLCQdMERUCdCDNdSTFd221008
050 aTK7871.95b.Z43 2017eb
072 aTECx0090702bisacsh
072 aB12102inspec
072 aB2560P2inspec
072 aB2560R2inspec
082 a621.3815284
100 aZhang, Zhiliang,eauthor.
245 00 aHigh frequency MOSFET gate drivers :btechnologies and applications /cZhiLiang Zhang and Yan-Fei Liu.
260 aLondon :bThe Institution of Engineering and Technology,c2017.
300 a1 online resource (xv, 279 pages).
336 atextbtxt2rdacontent
337 acomputerbc2rdamedia
338 aonline resourcebcr2rdacarrier
490 aMaterials, Circuits and Devices Ser.
504 aIncludes bibliographical references and index.
505 a"Contents"; "Authors"; biographies"; "Preface"; "List of symbols"; "1. Introduction"; "1.1 Introduction"; "1.2 Voltage regulator applications"; "1.3 Voltage source gate driver and high-frequency-dependent loss"; "1.3.1 Switching loss"; "1.3.2 Body diode conduction loss"; "1.3.3 Reverse recovery loss"; "1.3.4 Gate drive loss"; "1.4 Summary"; "References"; "2. Fundamentals of current source driver"; "2.1 Resonant gate drivers"; "2.2 Concept of current source driver"; "2.3 A practical and accurate switching loss model"; "2.3.1 Introduction"
505 a"2.3.2 Impact of parasitic inductance and load current"; "2.3.3 Proposed switching loss model"; "2.3.4 Turn-on switching loss model"; "2.3.5 Turn-off switching loss model"; "2.3.6 Voltage source drive model verification"; "2.3.7 Experimental validation of the voltage source drive model"; "2.4 Summary"; "References"; "3. Continuous current source driver"; "3.1 Two-channel low-side continuous current source drivers"; "3.1.1 Operating principle"; "3.1.2 Loss comparison"; "3.1.3 Advantages of the proposed current source driver"; "3.1.4 Applications"
505 a"3.1.5 Experimental results"; "3.2 High-side and low-side continuous current source drivers"; "3.2.1 Operating principle of proposed current source drivers"; "3.2.2 Advantages""; ""3.2.3 Loss analysis"; "3.2.4 Experimental results"; "3.3 Accurate switching loss model with current source drivers"; "3.3.1 Proposed MOSFET loss model with current source resonant driver"; "3.3.2 Analytical modeling and simulation results"; "3.3.3 Proposed optimal design with the accurate switching loss model"; "3.3.4 Experimental verification and discussion"
505 a"3.4 High-side and low-side current source drivers"; "3.4.1 Problem of high-side and low-side current source drivers"; "3.4.2 Proposed decoupled high-side and low-side current source drivers"; "3.4.3 New current-source gate driver with integrated magnetics"; "3.4.4 Experimental results and discussion"; "3.5 Summary"; "References"; "4. Discontinuous current source drivers"; "4.1 Discontinuous current source driver"; "4.1.1 Proposed low-side discontinuous CSD"; "4.1.2 Driver loss analysis"; "4.1.3 CSD design procedure"; "4.1.4 Design example"
505 a"4.1.5 Experimental results"; "4.2 High-side discontinuous CSD"; "4.2.1 Proposed CSD for synchronous buck converter and operation""; ""4.2.2 Design example""; ""4.2.3 Experimental results""; "4.3 Discontinuous CSD with reduced inductance"; "4.3.1 Proposed CSD and principle of operation"; "4.3.2 Proposed high-side CSD and hybrid gate-drive scheme"; "4.3.3 Experimental results"; "4.4 Current diversion"; "4.4.1 Introduction"; "4.4.2 Proposed switching loss model considering current diversion"; "4.4.3 Experimental results and discussions"; "4.5 Summary"; "References"
505 a"5. Adaptive current source drivers"
520 aThis book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.
588 aPrint version record.
590 aMaster record variable field(s) change: 072
650 aSwitching power supplies.
650 aMetal oxide semiconductor field-effect transistors.
650 aTECHNOLOGY & ENGINEERINGxMechanical.2bisacsh
650 aMetal oxide semiconductor field-effect transistors.2fast0(OCoLC)fst01017614
650 aSwitching power supplies.2fast0(OCoLC)fst01140643
650 aconstant current sources.2inspect
650 adriver circuits.2inspect
650 agallium compounds.2inspect
650 aHEMT circuits.2inspect
650 ainsulated gate bipolar transistors.2inspect
650 apower MOSFET.2inspect
650 asilicon compounds.2inspect
650 aswitching convertors.2inspect
655 aElectronic books.
700 1 aLiu, Yan-Fei,eauthor.
776 iPrint version:aZhang, ZhiLiang.tHigh frequency MOSFET gate drivers.dLondon : The Institution of Engineering and Technology, 2017z9781785613654w(OCoLC)1015829191
830 aMaterials, circuits and devices series ;v33.
856 3EBSCOhostuhttp://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=1616417
938 aEBL - Ebook LibrarybEBLBnEBL5109611
938 aEBSCOhostbEBSCn1616417
938 aProQuest MyiLibrary Digital eBook CollectionbIDEBncis38607029
938 aYBP Library ServicesbYANKn14899509
994 a92bN
High frequency MOSFET gate drivers :technologies and applications /ZhiLiang Zhang and Yan-Fei Liu
종류
전자책
서명
High frequency MOSFET gate drivers :technologies and applications /ZhiLiang Zhang and Yan-Fei Liu
저자명
Liu Yan-Fei author
발행사항
형태사항
1 online resource (xv, 279 pages)
주기사항
Includes bibliographical references and index. / This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices.
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