Thermal Management of High Power GaN MMIC on Silicon with Microjet Impingement Cooling
- Resource Type
- Conference
- Authors
- Yu, Miao; Zuo, Tongsheng; Huang, Min; Zhu, Jian
- Source
- 2022 IEEE 5th International Conference on Electronics Technology (ICET) Electronics Technology (ICET), 2022 IEEE 5th International Conference on. :537-543 May, 2022
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Robotics and Control Systems
Power system measurements
Temperature
Cooling
Density measurement
Computational fluid dynamics
Water heating
Atmosphere
microjet impingement cooling
thermal management
hetero-integration
- Language
- ISSN
- 2768-6515
A high power GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) integrated on a silicon interposer with microjet impingement cooling is presented in this work. A Si interposer and a test cube for coolant supply were designed using computational fluid dynamics (CFD) method. The GaN MMIC is a 3-stage PA, and it was integrated on the interposer then assembled in the test cube. The microjets were arranged beneath the $3^{\mathrm{r}\mathrm{d}}$ stage transistors of PA to increase the heat transfer efficiency. The fluidic parameters of deionized (DI) water circulation, electrical and thermal characteristics of the chip were monitored in a cooling test platform. The hotspot power density at the junctions achieved 416.5 $\mathrm{W}/\mathrm{m}\mathrm{m}^{2}$ and the average heat flux of the chip was up to $53\mathrm{S}.9\mathrm{W}/\mathrm{c}\mathrm{m}^{2}$. The maximum junction temperature of GaN PA maintained at 158. $2^{\circ}\mathrm{C}$ at $70^{\circ}\mathrm{C}$ atmosphere temperature with the pressure drop of $\sim$270kPa at the flow rate of $\sim 500\displaystyle \mathrm{m}\mathrm{L}/\min$. The implementation results have demonstrated that microjet impingement cooling is an effective and practical solution for high power hetero-integration on silicon substrate.