1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD
- Resource Type
- Conference
- Authors
- Xiao, Mingquan; Gong, Shijie; Zheng, Xieen; Jin, Yunjiang
- Source
- 2020 International Conference on UK-China Emerging Technologies (UCET) UK-China Emerging Technologies (UCET), 2020 International Conference on. :1-3 Aug, 2020
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Photodetectors
Gallium arsenide
Substrates
Epitaxial growth
Performance evaluation
MOCVD
Optical fiber communication
Photodetector
Germanium
III-V semiconductor material
- Language
In this work, p-Ge/GaAs hetero-epitaxy was studied by MOCVD and a p-Ge/i-GaAs/n-GaAs photodetector structure was fabricated aiming at 1.3, 1.55 $\mu$m photodetection. The photo-response spectra indicate that the prepared device has quite good performance on dark current and signal on/off ratio, suggesting promising application in optical fiber communication.