The refrigeration processes in the InP/AlInAs triple-well semiconductor system with various structures are analyzed theoretically based on the model of optothermionic refrigeration. Thermal energy extraction in the triple-well system is calculated to be as much as 26 W/cm2 theoretically with properly designed well widths and doping densities. Furthermore, the temperature drop distributions for hot semiconductor devices are obtained self-consistently with various parameters including cross-sectional area, generation heat, environment temperature, and refrigeration heat. [ABSTRACT FROM AUTHOR]