The cooling processes in the system of AlxIn1-xAs/InP/AlxIn1-xAs are analyzed with a self-consistent calculation based on the model of optothermionic refrigeration. The refrigeration heat as several W/cm2 is obtained theoretically with the optimal parameters of the aluminum atom fraction x and the doping density for the system. Due to the small Auger coefficient and the lower carriers’ density in the InP well, the Auger dissipation heat in the present system is smaller than that in the system of AlGaAs/GaAs/AlGaAs. Furthermore, the applied bias range for obtaining high cooling heat in the present system is calculated to be larger than that in the system of GaAs. For obtaining larger cooling heat, a double-well system of AlxIn1-xAs/InP/AlxIn1-xAs/InP/AlxIn1-xAs is designed, in which the maximum cooling heat is predicted as about 50% higher than that in a single-well system of AlxIn1-xAs/InP/AlxIn1-xAs. [ABSTRACT FROM AUTHOR]