In this study, the thermal budget of atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO) thin films have been investigated for memory applications. Specifically, using a furnace as a crystallization method of the HZO thin film, TiN/HZO/TiN capacitors were fabricated under various annealing temperature (300-500°C) and time (1–48 h) conditions. As a result, although the annealing time needs to be increased, the ferroelectric properties with robust endurance were realized by lowering the annealing temperature.