Microscopic modeling of the optical properties of dilute nitride semiconductor gain materials
- Resource Type
- Conference
- Authors
- Buckers, C.; Koch, S. W.; Thranhardt, A.; Hader, J.; Moloney, J. V.; Karcher, C.; Heimbrodt, W.; Kunert, B.; Volz, K.; Stolz, W.
- Source
- CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on. :1-1 Jun, 2009
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Optical microscopy
Optical materials
Semiconductor materials
Semiconductor device modeling
Monolithic integrated circuits
Laser modes
Semiconductor lasers
Silicon
Merging
Microelectronics
- Language
The development of efficient and powerful semiconductor laser devices demands a detailed analysis of their optical properties to characterize and identify the underlying physical processes. Such an analysis enables us to evaluate the relevant effects influencing the laser properties and thus, to study them systematically in dependence of design parameters in order to find optimized structural layouts. For this purpose we have developed a microscopic many-particle model; based on the semiconductor Bloch equations the absorption or rather the laser gain of a system can be quantitatively predicted [1].