Additional loss component in the Si-SBD model for low power rectennas in the high-impedance operation
- Resource Type
- Conference
- Authors
- Itoh, Takumi; Yonemura, Tsubasa; Sakai, Naoki; Itoh, Kenji
- Source
- 2022 Asia-Pacific Microwave Conference (APMC) Microwave Conference (APMC), 2022 Asia-Pacific. :452-454 Nov, 2022
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Resistance
Microwave antennas
Schottky diodes
Voltage measurement
Sensitivity
Rectennas
Schottky barriers
SBD
Rectenna
Rectifier
Small loop antenna
- Language
In this paper, a rectifier diode model for the commercial based Si- Schottky barrier diodes (SBDs) is discussed for high accurate simulation in low power rectennas with small loop antennas (SLAs). The rectennas with SLAs have technical features of small size and high sensitivity due to the higher resonance impedance more than 10 $\mathrm{k}\Omega$. To improve the insufficient simulation accuracy of the rectenna with the commercial based Si-SBDs and the SLA, impedance of the Si-SBD in revers bias voltage is measured. And it is clarified that there is the additional loss component of the Si SBD. This makes reduction of the resonance impedance of the rectenna and the output voltage. Furthermore, the modified diode model with the additional loss component is indicated for the improved simulation accuracy.