Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
- Resource Type
- Conference
- Authors
- Xie, Qingyun; Yuan, Mengyang; Niroula, John; Sikder, Bejoy; Luo, Shisong; Fu, Kai; Rajput, Nitul S.; Pranta, Ayan Biswas; Yadav, Pradyot; Zhao, Yuji; Chowdhury, Nadim; Palacios, Tomas
- Source
- 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
- Subject
- Components, Circuits, Devices and Systems
Solid modeling
Temperature
Design automation
Voltage
Very large scale integration
Market research
Timing
GaN
arithmetic logic unit
VLSI
high temperature
compact modeling
MVSG
computer-aided design (CAD).
- Language
- ISSN
- 2158-9682
This article reports advances in high temperature (HT) GaNon-Si technology by taking pioneering steps towards design technology co-optimization (DTCO). A computer-aided design (CAD) framework was established and experimentally validated up to $500 ^{\circ}\mathrm{C}$, the highest temperature achieved by such a framework for GaN technology. This framework was made possible thanks to (1) demonstration of multiple key functional building blocks (e.g. arithmetic logic unit (ALU)) by the proposed technology at HT; (2) experimentally calibrated transistor compact models up to $500 ^{\circ}\mathrm{C}($ highest temperature modeled for an Enhancement-mode GaN transistor). Excellent agreement was achieved between experimental and simulated circuits in the static characteristics ( 300 °C) electronics.