Comparison of Random and Channeled Implants of Al Ion into 4H-SiC (0001)
- Resource Type
- Conference
- Authors
- Ge, Huan; Wang, Rui; Yan, Jingrong; Zhou, Hang; Zhu, Tao; Li, Zheyang; Jin, Rui
- Source
- 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023 20th China International Forum on. :125-128 Nov, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Temperature measurement
Atomic measurements
Vibrations
Silicon carbide
Photonic band gap
Implants
Ions
- Language
Ion implantation is a well-established technique for introduction of dopants into 4H-SiC. And a strong channeling effect is observed for the ions of Al-ions implanted due to its crystalline structure. Random and channeled implants of Al- ions into the 4H-SiC have been performed in this paper. The depth distribution of Al-ions by implanting in the [000 $\overline 1 $] direction is shown to be about 3.0 to 3.5 times deeper than for random implantations that in the wafer miscut angle of 4° direction. And a larger degree of dechanneling is present which implanted at elevated (500°C) temperatures due to increased thermal vibrations and the penetration depth of Al is reduced. There is a large change in peak concentration with increasing Al-ions dose, while the trailing produced by channeling effect is little increased. Atomic force microscopy (AFM) measurements show that the roughness of channeled implants is lower than that of random implants at any energy, Means the corresponding reduction of defect concentrations of channeled implants. These results have important technical implications for the further development of implantation techniques for the fabrication of 4H-SiC devices.