An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs
- Resource Type
- Conference
- Authors
- Seong-Dong Kim; Narasimha, S.; Rim, K.
- Source
- IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :149-152 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
MOSFETs
Contact resistance
Doping
Silicides
Semiconductor process modeling
CMOS technology
Electric resistance
Solid modeling
Voltage
Conductivity
- Language
- ISSN
- 0163-1918
2156-017X
A new integrated methodology for the accurate extraction of source/drain (S/D) series resistance components with emphasis on the spreading and contact resistance elements is presented. For the first time, detailed extractions of lateral extension doping abruptness and silicide specific contact resistance are made directly from 90nm-node SOI MOSFET characterization. The spreading resistance due to the lateral doping gradient is found to be a key component contributing to total parasitics, and the doping gradient engineering and scaling of specific contact resistance must be employed to overcome this parasitic limitation in future nanoscale CMOS performance roadmap