Direct experimental evidence of indirect bandgap transitions in strained GaInAs(P)/InP quantum well structures
- Resource Type
- Conference
- Authors
- Harle, V.; Bolay, H.; Lux, E.; Scholz, F.; Michler, P.; Moritz, A.; Forner, T.; Hangleiter, A.
- Source
- Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Indium phosphide and related materials Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on. :6-9 1994
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Photonic band gap
Indium phosphide
Tensile strain
Capacitive sensors
Charge carrier processes
Quantization
Temperature
Photoluminescence
Phonons
Optical modulation
- Language
An additional low energy peak was found in low temperature photoluminescence of tensile strained GaInAs/InP quantum well structures. Owing to the tensile strain, the uppermost valence band state is shifted out of the Brillouin zone center thus giving rise to the formation of an indirect band structure. In consequence, the low energy peak was attributed to a phonon assisted transition of an indirect exciton. Carrier lifetime measurements confirm this interpretation.ETX