A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz
- Resource Type
- Periodical
- Authors
- Wu, Y.; Jacob-Mitos, M.; Moore, M. L.; Heikman, S.
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(8):824-826 Aug, 2008
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Gallium nitride
HEMTs
Power generation
Switches
Voltage
Silicon carbide
Jacobian matrices
MODFETs
Frequency conversion
Power supplies
Converter
efficiency
GaN
high voltage
highelectron-mobility transistors (HEMTs)
power device
switching power supply
- Language
- ISSN
- 0741-3106
1558-0563
A 175-to-350 V hard-switched boost converter was constructed using a high-voltage GaN high-electron-mobility transistor grown on SiC substrate. The high speed and low on-resistance of the wide-band-gap device enabled extremely fast switching transients and low losses, resulting in a high conversion efficiency of 97.8% with 300-W output power at 1 MHz. The maximum efficiency was 98.0% at 214-W output power, well exceeding the state of the art of Si-based converters at similar frequencies.