A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs
- Resource Type
- Conference
- Authors
- Orzati, A.; Robin, F.; Meier, H.P.; Bachtold, W.
- Source
- 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2002. 24th Annual Technical Digest. :117-119 2002
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
MMICs
Indium phosphide
HEMTs
MODFETs
Universal Serial Bus
Radio frequency
Threshold voltage
Laboratories
Circuit synthesis
Electromagnetic fields
- Language
- ISSN
- 1064-7775
In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion gain of -7.3 dBm for 2 dBm LO power, an LO suppression of 20 dB and an upper-sideband rejection of more than 17 dB. This performance is excellent if compared to the best reported results for InP HEMT resistive mixers.