Sub 50 nm InP HEMT with fT = 586 GHz and amplifier circuit gain at 390 GHz for sub-millimeter wave applications
- Resource Type
- Conference
- Authors
- Lai, R.; Mei, X. B.; Sarkozy, S.; Yoshida, W.; Liu, P. H.; Lee, J.; Lange, M.; Radisic, V.; Leong, K.; Deal, W.
- Source
- 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide & Related Materials (IPRM), 2010 International Conference on. :1-3 May, 2010
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Indium phosphide
HEMTs
Frequency
Fingers
Submillimeter wave integrated circuits
Scattering parameters
Probes
Gain
Epitaxial growth
Semiconductor process modeling
- Language
- ISSN
- 1092-8669
In this paper, we report recent advances on sub-50 nm InP HEMT have achieved new benchmarks of 586 GHz fT and 7 dB amplifier circuit gain at 390 GHz