We report on flux-flow properties of 50 nm thick thin-film amorphous MoGe bridges of different sizes with and without patterned sub-micron holes with different diameters and spacings. Characterization of the devices was carried out in liquid He at 4.2 K in a magnetic field, H , applied perpendicular to the device plane. Two critical currents, I c1 and I c2 , were studied. The current I c1 is identified as the onset of a low-resistance state, whereas I c2 is the current at which the device switches to a high-resistance state, and the corresponding dependences I c1 ( H ) and I c2 ( H ) were determined. In the absence of the holes, I c1 decreases monotonically with H , whereas I c2 ( H ) manifests lobes resembling those in the Fraunhofer-like pattern characteristic of Josephson junctions. This behavior may be due to formation of an ordered vortex lattice in some current and field ranges. Introducing the hole-line arrays modifies both I c1 ( H ) and I c2 ( H ) in a way that is most complicated for larger hole diameters.