For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below 250°C due to the presence of temporary bonding materials. In this paper we, present a new PECVD SiCN layer deposited at 175°C, optimized for hybrid bonding applications. The layer provides void-free wafer to wafer bonding interface demonstrated by high bond strength even at a post bond annealing (PBA) temperature of 200°C and devoid of any outgassing voids until 350°C. Additionally, it has been verified that the layer has excellent moisture and as electrical barrier properties.