Traps effect on the I-V-T characteristics of Au/n-InP Schottky barrier diode
- Resource Type
- Conference
- Authors
- Fritah, Abdallah; Dehimi, Lakhder; Saadoune, Achour; Bekhouche, Khaled
- Source
- 2018 International Conference on Communications and Electrical Engineering (ICCEE) Communications and Electrical Engineering (ICCEE), 2018 International Conference on. :1-5 Dec, 2018
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
General Topics for Engineers
Power, Energy and Industry Applications
Signal Processing and Analysis
Resistance
Electron traps
Temperature distribution
Schottky diodes
Schottky barriers
Indium phosphide
I-V curves intersection
SBD
series resistance
traps
- Language
In the present study, the I-V characteristic of Au/n-InP Schottky barrier diode (SBD) was simulated in the temperature range 200–300 K using the numerical simulator Atlas-Silvaco. By taking in to account the appropriate physical models and the presence of deep traps in the quasi-neutral region, the simulation was performed in goal to understand the effect of traps on the series resistance and the I-V curves intersection point. The obtained results clarified that the series resistance is related to the traps depth in the quasi-neutral region. In addition, the results prove that the I-V curves intersection point shift toward higher bias with increasing the series resistance value. Also the I-V curves crossing point found to be temperature dependent when the series resistance is not zero.